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integrated silicon solution, inc. ? 1-800-379-4774 1 rev. b 04/28/05 is41lv16256b issi ? copyright ? 2005 integrated silicon solution, inc. all rights reserved. issi reserves the right to make changes to this speci fication and its products at any time without notice. issi assumes no liability arising out of the application or use of any information, products or services desc ribed herein. customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders fo r products. features ? ttl compatible inputs and outputs refresh interval: 512 cycles/8 ms refresh mode : ras -only, cas -before- ras (cbr), and hidden jedec standard pinout single power supply: 3.3v 10% byte write and byte read operation via two cas lead-free available description the issi is41lv16256b is 262,144 x 16-bit high-perfor- mance cmos dynamic random access memory. both prod- ucts offer accelerated cycle access edo page mode. edo page mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. the byte write control, of upper and lower byte, makes the is41lv16256b ideal for use in 16 and 32-bit wide data bus systems. these features make the is41lv16256b ideally suited for high band-width graphics, digital signal processing, high- performance computing systems, and peripheral applications. the is41lv16256b is packaged in 40-pin 400-mil soj and tsop (type ii). 256k x 16 (4-mbit) dynamic ram april 2005 with edo page mode key timing parameters parameter -35 -60 unit max. ras access time (t rac )3560ns max. cas access time (t cac )1115ns max. column address access time (t aa )18 30 ns min. edo page mode cycle time (t pc )1425ns min. read/write cycle time (t rc ) 60 110 ns pin configurations 40-pin tsop (type ii) 40-pin soj pin descriptions a0-a8 address inputs i/o0-15 data inputs/outputs we write enable oe output enable ras row address strobe ucas upper column address strobe lcas lower column address strobe v dd power gnd ground nc no connection 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 vdd i/o0 i/o1 i/o2 i/o3 vdd i/o4 i/o5 i/o6 i/o7 nc nc we ras nc a0 a1 a2 a3 vdd gnd i/o15 i/o14 i/o13 i/o12 gnd i/o11 i/o10 i/o9 i/o8 nc lcas ucas oe a8 a7 a6 a5 a4 gnd 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 vdd i/o0 i/o1 i/o2 i/o3 vdd i/o4 i/o5 i/o6 i/o7 nc nc we ras nc a0 a1 a2 a3 vdd gnd i/o15 i/o14 i/o13 i/o12 gnd i/o11 i/o10 i/o9 i/o8 nc lcas ucas oe a8 a7 a6 a5 a4 gnd
2 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 04/28/05 is41lv16256b issi ? functional block diagram o e we l cas ucas cas we oe data i/o bus column decoders sense amplifiers memory array 262,144 x 16 row decoder data i/o buffers cas clock generator we control logics oe control logic i/o0-i/o15 ras ras a0-a8 ras clock generator refresh counter address buffers
integrated silicon solution, inc. ? 1-800-379-4774 3 rev. b 04/28/05 is41lv16256b issi ? truth table function ras ras ras ras ras lcas lcas lcas lcas lcas ucas ucas ucas ucas ucas we we we we we oe oe oe oe oe address t r /t c i/o standby h h h x x x high-z read: word l l l h l row/col d out read: lower byte l l h h l row/col lower b yte, d out upper byte, high-z read: upper byte l h l h l row/col lower byte, high-z upper byte, d out write: word (early write) l l l l x row/col d in write: lower byte (early write) l l h l x row/col lower byte, d in upper byte, high-z write: upper byte (early write) l h l l x row/col lower byte, high-z upper byte, d in read-write (1,2) lllh ll h row/col d out , d in edo page-mode read (2) 1st cycle: l h lh l h l row/col d out 2nd cycle: l h lh l h l na/col d out any cycle: l l hl h h l na/na d out edo page-mode write (1) 1st cycle: l h lh l l x row/col d in 2nd cycle: l h lh l l x na/col d in edo page-mode 1st cycle: l h lh lh ll h row/col d out , d in read-write (1,2) 2nd cycle: l h lh lh ll h na/col d out , d in hidden refresh 2) read l h l l l h l row/col d out write l h l l l l x row/col d out ras -only refresh l h h x x row/na high-z cbr refresh (3) h l l l x x x high-z notes: 1. these write cycles may also be byte write cycles (either lcas or ucas active). 2. these read cycles may also be byte read cycles (either lcas or ucas active). 3. at least one of the two cas signals must be active ( lcas or ucas ).
4 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 04/28/05 is41lv16256b issi ? functional description the is41lv16256b is a cmos dram optimized for high- speed bandwidth, low power applications. during read or write cycles, each bit is uniquely addressed through the 18 address bits. these are entered nine bits (a0-a8) at a time. the row address is latched by the row address strobe ( ras ). the column address is latched by the column address strobe ( cas ). ras is used to latch the first nine bits and cas is used the latter nine bits. the is41lv16256b has two cas controls, lcas and ucas . the lcas and ucas inputs internally generates a cas signal functioning in an identical manner to the single cas input on the other 256k x 16 drams. the key difference is that each cas controls its corresponding i/o tristate logic (in conjunction with oe and we and ras ). lcas controls i/o0 through i/o7 and ucas controls i/o8 through i/o15. the is41lv16256b cas function is determined by the first cas ( lcas or ucas ) transitioning low and the last transitioning back high. the two cas controls give the is41lv16256b both byte read and byte write cycle capabilities. memory cycle a memory cycle is initiated by bring ras low and it is terminated by returning both ras and cas high. to ensures proper device operation and data integrity any memory cycle, once initiated, must not be ended or aborted before the minimum t ras time has expired. a new cycle must not be initiated until the minimum precharge time t rp , t cp has elapsed. read cycle a read cycle is initiated by the falling edge of cas or oe , whichever occurs last, while holding we high. the column address must be held for a minimum time speci- fied by t ar . data out becomes valid only when t rac , t aa , t cac and t oea are all satisfied. as a result, the access time is dependent on the timing relationships between these parameters. write cycle a write cycle is initiated by the falling edge of cas and we , whichever occurs last. the input data must be valid at or before the falling edge of cas or we , whichever occurs last. refresh cycle to retain data, 512 refresh cycles are required in each 8 ms period. there are two ways to refresh the memory. 1. by clocking each of the 512 row addresses (a0 through a8) with ras at least once every 8 ms. any read, write, read-modify-write or ras -only cycle refreshes the ad- dressed row. 2. using a cas -before- ras refresh cycle. cas -before- ras refresh is activated by the falling edge of ras , while holding cas low. in cas -before- ras refresh cycle, an internal 9-bit counter provides the row ad- dresses and the external address inputs are ignored. cas -before- ras is a refresh-only mode and no data access or device selection is allowed. thus, the output remains in the high-z state during the cycle. extended data out page mode edo page mode operation permits all 512 columns within a selected row to be randomly accessed at a high data rate. in edo page mode read cycle, the data-out is held to the next cas cycle?s falling edge, instead of the rising edge. for this reason, the valid data output time in edo page mode is extended compared with the fast page mode. in the fast page mode, the valid data output time becomes shorter as the cas cycle time becomes shorter. there- fore, in edo page mode, the timing margin in read cycle is larger than that of the fast page mode even if the cas cycle time becomes shorter. in edo page mode, due to the extended data function, the cas cycle time can be shorter than in the fast page mode if the timing margin is the same. the edo page mode allows both read and write opera- tions during one ras cycle, but the performance is equivalent to that of the fast page mode in that case. power-on after application of the v dd supply, an initial pause of 200 s is required followed by a minimum of eight initial- ization cycles (any combination of cycles containing a ras signal). during power-on, it is recommended that ras track with v dd or be held at a valid v ih to avoid current surges.
integrated silicon solution, inc. ? 1-800-379-4774 5 rev. b 04/28/05 is41lv16256b issi ? absolute maximum ratings (1) symbol parameters rating unit v t voltage on any pin relative to gnd 3.3v -0.5 to 4.6 v v dd supply voltage 3.3v -0.5 to 4.6 v i out output current 50 ma p d power dissipation 1 w t a commercial operation temperature 0 to +70 c t stg storage temperature ?55 to +125 c note: 1. stress greater than those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. capacitance (1,2) symbol parameter max. unit c in 1 input capacitance: a0-a8 5 pf c in 2 input capacitance: ras , ucas , lcas , we , oe 7pf c io data input/output capacitance: i/o0-i/o15 7 pf notes: 1. tested initially and after any design or process changes that may affect these parameters. 2. test conditions: t a = 25c, f = 1 mhz, recommended operating conditions (voltages are referenced to gnd.) symbol parameter min. typ. max. unit v dd supply voltage 3.3v 3.0 3.3 3.6 v v ih input high voltage 3.3v 2.0 ? v dd + 0.3 v v il input low voltage 3.3v ?0.3 ? 0.8 v t a commercial ambient temperature 0 ? +70 c
6 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 04/28/05 is41lv16256b issi ? electrical characteristics (1) (recommended operation conditions unless otherwise noted.) symbol parameter test condition speed min. max. unit i il input leakage current any input 0v v in v dd ?10 10 a other inputs not under test = 0v i io output leakage current output is disabled (hi-z) ?10 10 a 0v v out v dd v oh output high voltage level i oh = ?2 ma 2.4 ? v v ol output low voltage level i ol = +2 ma ? 0.4 v i cc 1 stand-by current: ttl ras , lcas , ucas v ih commercial 3v ? 4 ma i cc 2 stand-by current: cmos ras , lcas , ucas v dd ? 0.2v 3v ? 1 ma i cc 3 operating current: ras , lcas , ucas , -35 ? 230 ma random read/write (2,3,4) address cycling, t rc = t rc (min.) -60 ? 170 average power supply current i cc 4 operating current: ras = v il , lcas , ucas , -35 ? 220 ma edo page mode (2,3,4) cycling t pc = t pc (min.) -60 ? 160 average power supply current i cc 5 refresh current: ras cycling, lcas , ucas v ih -35 ? 230 ma ras -only (2,3) t rc = t rc (min.) -60 ? 170 average power supply current i cc 6 refresh current: ras , lcas , ucas cycling -35 ? 230 ma cbr (2,3,5) t rc = t rc (min.) -60 ? 170 average power supply current notes: 1. an initial pause of 200 s is required after power-up followed by eight ras refresh cycles ( ras -only or cbr) before proper device operation is assured. the eight ras cycles wake-up should be repeated any time the t ref refresh requirement is exceeded. 2. dependent on cycle rates. 3. specified values are obtained with minimum cycle time and the output open. 4. column-address is changed once each edo page cycle. 5. enables on-chip refresh and address counters.
integrated silicon solution, inc. ? 1-800-379-4774 7 rev. b 04/28/05 is41lv16256b issi ? ac characteristics (1,2,3,4,5,6) (recommended operating conditions unless otherwise noted.) -35 -60 symbol parameter min. max. min. max. units t rc random read or write cycle time 70 ? 110 ? ns t rac access time from ras (6, 7) 35 ? 60 ? ns t cac access time from cas (6, 8, 15) ?11 ?15 ns t aa access time from column-address (6) ?18 ?30 ns t ras ras pulse width 35 10k 60 10k ns t rp ras precharge time 25 ? 40 ? ns t cas cas pulse width (26) 6 10k 10 10k ns t cp cas precharge time (9, 25) 6? 10? ns t csh cas hold time (21) 35 ? 60 ? ns t rcd ras to cas delay time (10, 20) 13 24 20 45 ns t asr row-address setup time 0 ? 0 ? ns t rah row-address hold time 6 ? 10 ? ns t asc column-address setup time (20) 0? 0? ns t cah column-address hold time (20) 6? 10? ns t ar column-address hold time 30 ? 45 ? ns (referenced to ras ) t rad ras to column-address delay time (11) 10 20 15 30 ns t ral column-address to ras lead time 18 ? 30 ? ns t rpc ras to cas precharge time 0 ? 0 ? ns t rsh ras hold time (27) 10 ? 15 ? ns t clz cas to output in low-z (15, 29) 3? 3? ns t crp cas to ras precharge time (21) 5? 5? ns t od output disable time (19, 28, 29) 315 315 ns t oe / t oea output enable time (15, 16) 011 ?15 ns t oehc oe high hold time from cas high 8 ? 8 ? ns t oep oe high pulse width 8 ? 8 ? ns t oes oe low to cas high setup time 5 ? 7 ? ns t rcs read command setup time (17, 20) 0? 0? ns t rrh read command hold time 0 ? 0 ? ns (referenced to ras ) (12) t rch read command hold time 0 ? 0 ? ns (referenced to cas ) (12, 17, 21) t wch write command hold time (17, 27) 5? 10? ns t wcr write command hold time 30 ? 50 ? ns (referenced to ras ) (17)
8 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 04/28/05 is41lv16256b issi ? ac characteristics (continued) (1,2,3,4,5,6) (recommended operating conditions unless otherwise noted.) -35 -60 symbol parameter min. max. min. max. units t wp write command pulse width (17) 5? 10? ns t wpz we pulse widths to disable outputs 10 ? 10 ? ns t rwl write command to ras lead time (17) 10 ? 15 ? ns t cwl write command to cas lead time (17, 21) 8? 15? ns t wcs write command setup time (14, 17, 20) 0? 0? ns t dhr data-in hold time (referenced to ras )30?46? ns t ach column-address setup time to cas 15 ? 15 ? ns precharge during write cycle t oeh oe hold time from we during 8 ? 15 ? ns read-modify-write cycle (18) t ds data-in setup time (15, 22) 0? 0? ns t dh data-in hold time (15, 22) 6? 10? ns t rwc read-modify-write cycle time 80 ? 140 ? ns t rwd ras to we delay time during 46 ? 80 ? ns read-modify-write cycle (14) t cwd cas to we delay time (14, 20) 25 ? 36 ? ns t awd column-address to we delay time (14) 30 ? 49 ? ns t pc edo page mode read or write 14 ? 25 ? ns cycle time (24) t rasp ras pulse width in edo page mode 35 100k 60 100k ns t cpa access time from cas precharge (15) ?20 ?35 ns t prwc edo page mode read-write 45 ? 60 ? ns cycle time (24) t coh / t doh data output hold after cas low 5 ? 5 ? ns t off output buffer turn-off delay from 3 10 3 15 ns cas or ras (13,15,19, 29) t whz output disable delay from we 310 315 ns t clch last cas going low to first cas 10 ? 10 ? ns returning high (23) t csr cas setup time (cbr refresh) (30, 20) 8? 10? ns t chr cas hold time (cbr refresh) (30, 21) 8? 10? ns t ord oe setup time prior to ras during 0 ? 0 ? ns hidden refresh cycle t ref refresh period (512 cycles) ? 8 ? 8 ms t t transition time (rise or fall) (2, 3) 250 250 ns
integrated silicon solution, inc. ? 1-800-379-4774 9 rev. b 04/28/05 is41lv16256b issi ? notes: 1. an initial pause of 200 s is required after power-up followed by eight ras refresh cycle ( ras -only or cbr) before proper device operation is assured. the eight ras cycles wake-up should be repeated any time the t ref refresh requirement is exceeded. 2. v ih (min) and v il (max) are reference levels for measuring timing of input signals. transition times, are measured between v ih and v il (or between v il and v ih ) and assume to be 1 ns for all inputs. 3. in addition to meeting the transition rate specification, all input signals must transit between v ih and v il (or between v il and v ih ) in a monotonic manner. 4. if cas and ras = v ih , data output is high-z. 5. if cas = v il , data output may contain data from the last valid read cycle. 6. measured with a load equivalent to one ttl gate and 50 pf. 7. assumes that t rcd < t rcd (max). if t rcd is greater than the maximum recommended value shown in this table, t rac will increase by the amount that t rcd exceeds the value shown. 8. assumes that t rcd t rcd (max). 9. if cas is low at the falling edge of ras , data out will be maintained from the previous cycle. to initiate a new cycle and clear the data output buffer, cas and ras must be pulsed for t cp . 10. operation with the t rcd (max) limit ensures that t rac (max) can be met. t rcd (max) is specified as a reference point only; if t rcd is greater than the specified t rcd (max) limit, access time is controlled exclusively by t cac . 11. operation within the t rad (max) limit ensures that t rcd (max) can be met. t rad (max) is specified as a reference point only; if t rad is greater than the specified t rad (max) limit, access time is controlled exclusively by t aa . 12. either t rch or t rrh must be satisfied for a read cycle. 13. t off (max) defines the time at which the output achieves the open circuit condition; it is not a reference to v oh or v ol . 14. t wcs , t rwd , t awd and t cwd are restrictive operating parameters in late write and read-modify-write cycle only. if t wcs t wcs (min), the cycle is an early write cycle and the data output will remain open circuit throughout the entire cycle. if t rwd t rwd (min), t awd t awd (min) and t cwd t cwd (min), the cycle is a read-write cycle and the data output will contain data read from the selected cell. if neither of the above conditions is met, the state of i/o (at access time and until cas and ras or oe go back to v ih ) is indeterminate. oe held high and we taken low after cas goes low result in a late write ( oe -controlled) cycle. 15. output parameter (i/o) is referenced to corresponding cas input, i/o0-i/o7 by lcas and i/o8-i/o15 by ucas . 16. during a read cycle, if oe is low then taken high before cas goes high, i/o goes open. if oe is tied permanently low, a late write or read-modify-write is not possible. 17. write command is defined as we going low. 18. late write and read-modify-write cycles must have both t od and t oeh met ( oe high during write cycle) in order to ensure that the output buffers will be open during the write cycle. the i/os will provide the previously written data if cas remains low and oe is taken back to low after t oeh is met. 19. the i/os are in open during read cycles once t od or t off occur. 20. the first cas edge to transition low. 21. the last cas edge to transition high. 22. these parameters are referenced to cas leading edge in early write cycles and we leading edge in late write or read- modify-write cycles. 23. last falling cas edge to first rising cas edge. 24. last rising cas edge to next cycle?s last rising cas edge. 25. last rising cas edge to first falling cas edge. 26. each cas must meet minimum pulse width. 27. last cas to go low. 28. i/os controlled, regardless ucas and lcas . 29. the 3 ns minimum is a parameter guaranteed by design. 30. enables on-chip refresh and address counters.
10 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 04/28/05 is41lv16256b issi ? read cycle note: 1. t off is referenced from rising edge of ras or cas , whichever occurs last. t ras t rc t rp t ar t cah t asc t rad t ral oe i/o we address ucas / lcas ras row column row open open valid data t csh t cas t rsh t crp t clch t rcd t rah t asr t rrh t rch t rcs t aa t cac t off (1) t rac t clc t oes t oe t od don't care
integrated silicon solution, inc. ? 1-800-379-4774 11 rev. b 04/28/05 is41lv16256b issi ? early write cycle ( oe oe oe oe oe = don't care) t ras t rc t rp t ar t cah t asc t rad t ral t ach i/o we address ucas / lcas ras row column row t csh t cas t rsh t crp t clch t rcd t rah t asr t cwl t wcr t wch t rwl t wp t wcs t dh t ds t dhr valid data don't care
12 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 04/28/05 is41lv16256b issi ? read write cycle (late write and read-modify-write cycles) t ras t rwc t rp t ar t cah t asc t rad t ral t ach we oe address ucas / lcas ras row column row t csh t cas t rsh t crp t clch t rcd t rah t asr t rwd t cwl t cwd t rwl t awd t wp t rcs t cac t clz t ds t dh t oeh t od t oe t rac t aa i/o open open valid d out valid d in don't care
integrated silicon solution, inc. ? 1-800-379-4774 13 rev. b 04/28/05 is41lv16256b issi ? edo-page-mode read cycle note: 1. t pc can be measured from falling edge of cas to falling edge of cas , or from rising edge of cas to rising edge of cas . both measurements must meet the t pc specifications. t rasp t rp address ucas / lcas ras row row t cas, t clch t crp t rcd t csh t cp t cas, t clch t cah t cas, t clch t ral t rsh t cp t cp t pc (1) t asr t rah t rad t ar column column t cah t cah column t asc t asc oe i/o we open ope n valid data t aa t aa t cpa t cac t cac t rac t coh t clz t oep t oe t oes t oes t od t oe t oehc valid data t rch t rrh t aa t cpa t cac t off t clz valid data t od t asc t rcs don't care
14 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 04/28/05 is41lv16256b issi ? edo-page-mode early-write cycle t rasp t rp address ucas / lcas ras row row t cas, t clch t crp t rcd t csh t cp t cas, t clch t cah t cas, t clch t ral t rsh t cp t cp t pc t asr t rah t rad t ar t ach column column t ach t ach t cah t cah column t asc t asc oe i/o we valid data t asc t wcs t wch t cwl t wp t wcs t wch t cwl t wp t ds t dh t dhr t wcr t wcs t wch t cwl t wp valid data t ds t dh valid data t ds t rwl t dh don't care
integrated silicon solution, inc. ? 1-800-379-4774 15 rev. b 04/28/05 is41lv16256b issi ? edo-page-mode read-write cycle (late write and read-modify write cycles) note: 1. t pc can be measured from falling edge of cas to falling edge of cas , or from rising edge of cas to rising edge of cas . both measurements must meet the t pc specifications. t rasp t rp address ucas / lcas ras row row t crp t rcd t csh t cp t cah t cas, t clch t ral t rsh t cp t cp t rah t rad t ar t asr column column t cah t cah column t asc t asc t cas, t clch t cas, t clch oe i/o we t asc t rwd t rcs t cwl t wp t awd t cwd t dh t ds t cac t clz t awd t cwd t cwl t wp t awd t cwd t cwl t rwl t wp open open d in d out t oe t oe t oe t od t oeh t od t od t dh t ds t cpa t aa t cac t clz d in d out t dh t ds t cac t clz d in d out t cpa t aa t rac t aa t pc / t prwc (1) don't care
16 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 04/28/05 is41lv16256b issi ? edo-page-mode read-early-write cycle (psuedo read-modify write) t rasp t rp address ucas / lcas ras row row t crp t rcd t pc t csh t cp t cah t cas t ral t rsh t cp t cp t ach t rah t rad t ar t asr column (a) column (n) t cah t cah column (b) t asc t asc t cas t cas oe i/o we t asc t cac t rch t dh open open valid data (a) t oe t wcs t cac t coh d in t cpa t wch t rac t aa t pc valid data (b) t whz t ds t rcs t aa don't care
integrated silicon solution, inc. ? 1-800-379-4774 17 rev. b 04/28/05 is41lv16256b issi ? ac waveforms read cycle (with we we we we we -controlled disable) ras ras ras ras ras -only refresh cycle ( oe oe oe oe oe , we we we we we = don't care) t ar t cah t asc t asc t rad oe i/o we address ucas / lcas ras row column open open valid data t csh t cas t crp t rcd t cp t rah t asr t rch t rcs t rcs t aa t cac t whz t rac t clz t clz t oe t od column t ras t rc t rp i/o address ucas / lcas ras row row open t crp t rah t asr t rpc don't care don't care
18 integrated silicon solution, inc. ? 1-800-379-4774 rev. b 04/28/05 is41lv16256b issi ? hidden refresh cycle ( we we we we we = high; oe oe oe oe oe = low) (1) cbr cbr cbr cbr cbr refresh cycle (addresses; we we we we we , oe oe oe oe oe = don't care) notes: 1. a hidden refresh may also be performed after a write cycle. in this case, we = low and oe = high. 2. t off is referenced from rising edge of ras or cas , whichever occurs last. t ras t ras t rp t rp i/o ucas/lcas ras open t cp t rpc t csr t chr t rpc t csr t chr t ras t ras t rp ucas / lcas ras t crp t rcd t rsh t chr t ar t asc t rad address row column t rah t asr t ral t cah i/o open open valid data t aa t cac t rac t clz t off (2) oe t oe t ord t od don't care
integrated silicon solution, inc. ? 1-800-379-4774 19 rev. b 04/28/05 is41lv16256b issi ? ordering information : 3.3v commercial range: 0 o c to +70 o c speed (ns) order part no. package 35 is41lv16256b-35k 400-mil soj IS41LV16256B-35KL 400-mil soj, lead-free is41lv16256b-35t 400-mil tsop (type ii) is41lv16256b-35tl 400-mil tsop (type ii), lead-free 60 is41lv16256b-60k 400-mil soj is41lv16256b-60kl 400-mil soj, lead-free is41lv16256b-60t 400-mil tsop (type ii) is41lv16256b-60tl 400-mil tsop (type ii), lead-free
packaging information issi ? integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 rev. f 10/29/03 copyright ? 2003 integrated silicon solution, inc. all rights reserved. issi reserves the right to make changes to this speci fication and its products at any time without notice. issi assumes no liability arising out of the application or use of any information, products or services desc ribed herein. customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders fo r products. 400-mil plastic soj package code: k notes: 1. controlling dimension: millimeters. 2. bsc = basic lead spacing between centers. 3. dimensions d and e1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. reference document: jedec ms-027. seating plane 1 n e1 d e2 e b e a1 a c a2 b n/2+1 n/2 millimeters inches millimeters inches millimeters inches symbol min max min max min max min max min max min max no. leads (n) 28 32 36 a 3.25 3.75 0.128 0.148 3.25 3.75 0.128 0.148 3.25 3.75 0.128 0.148 a1 0.64 ? 0.025 ? 0.64 ? 0.025 ? 0.64 ? 0.025 ? a2 2.08 ? 0.082 ? 2.08 ? 0.082 ? 2.08 ? 0.082 ? b 0.38 0.51 0.015 0.020 0.38 0.51 0.015 0.020 0.38 0.51 0.015 0.020 b 0.66 0.81 0.026 0.032 0.66 0.81 0.026 0.032 0.66 0.81 0.026 0.032 c 0.18 0.33 0.007 0.013 0.18 0.33 0.007 0.013 0.18 0.33 0.007 0.013 d 18.29 18.54 0.720 0.730 20.82 21.08 0.820 0.830 23.37 23.62 0.920 0.930 e 11.05 11.30 0.435 0.445 1 1.05 11.30 0.435 0.445 11.05 11.30 0.435 0.445 e1 10.03 10.29 0.395 0.405 10.03 10.29 0.395 0.405 10.03 10.29 0.395 0.405 e2 9.40 bsc 0.370 bsc 9.40 bsc 0.370 bsc 9.40 bsc 0.370 bsc e 1.27 bsc 0.050 bsc 1.27 bsc 0.050 bsc 1.27 bsc 0.050 bsc
packaging information issi ? copyright ? 2003 integrated silicon solution, inc. all rights reserved. issi reserves the right to make changes to this speci fication and its products at any time without notice. issi assumes no liability arising out of the application or use of any information, products or services desc ribed herein. customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders fo r products. 2 integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 rev. f 10/29/03 millimeters inches millimeters inches millimeters inches symbol min max min max min max min max min max min max no. leads (n) 40 42 44 a 3.25 3.75 0.128 0.148 3.25 3.75 0.128 0.148 3.25 3.75 0.128 0.148 a1 0.64 ? 0.025 ? 0.64 ? 0.025 ? 0.64 ? 0.025 ? a2 2.08 ? 0.082 ? 2.08 ? 0.082 ? 2.08 ? 0.082 ? b 0.38 0.51 0.015 0.020 0.38 0.51 0.015 0.020 0.38 0.51 0.015 0.020 b 0.66 0.81 0.026 0.032 0.66 0.81 0.026 0.032 0.66 0.81 0.026 0.032 c 0.18 0.33 0.007 0.013 0.18 0.33 0.007 0.013 0.18 0.33 0.007 0.013 d 25.91 26.16 1.020 1.030 27.18 27.43 1.070 1.080 28.45 28.70 1.120 1.130 e 11.05 11.30 0.435 0.445 11.05 11.30 0.435 0.445 11.05 11.30 0.435 0.445 e1 10.03 10.29 0.395 0.405 10.03 10.29 0.395 0.405 10.03 10.29 0.395 0.405 e2 9.40 bsc 0.370 bsc 9.40 bsc 0.370 bsc 9.40 bsc 0.370 bsc e 1.27 bsc 0.050 bsc 1.27 bsc 0.050 bsc 1.27 bsc 0.050 bsc
integrated silicon solution, inc. packaging information plastic tsop package code: t (type ii) plastic tsop (t - type ii) (ms 25) millimeters inches symbol min max min max ref. std. n 24/26 a 1.20 0.0472 a1 0.05 0.15 0.002 0.0059 b 0.30 0.51 0.012 0.0201 c 0.12 0.21 0.005 0.0083 d 17.01 17.27 0.670 0.6899 e 1 7.49 7.75 0.295 0.3051 e 1.27 bsc 0.050 bsc e 9.02 9.42 0.462 0.4701 l 0.40 0.60 0.016 0.0236 a 0 5 0 5 pk13197t40 rev. c 08/013/99 plastic tsop (t - type ii) (ms 24) millimeters inches symbol min max min max ref. std. n 40/44 a 1.20 0.0472 a1 0.05 0.15 0.002 0.0059 b 0.30 0.45 0.012 0.0157 c 0.12 0.21 0.005 0.0083 d 18.31 18.51 0.721 0.7287 e 1 10.06 10.26 0.396 0.4040 e 0.80 bsc 0.031 bsc e 11.56 11.96 0.455 0.4709 l 0.40 0.60 0.016 0.0236 a 0 8 0 8 plastic tsop (t - type ii) (ms 24) millimeters inches symbol min max min max ref. std. n 44/50 a 1.20 0.0472 a1 0.05 0.15 0.002 0.0059 b 0.30 0.45 0.012 0.0157 c 0.12 0.21 0.005 0.0083 d 20.85 21.05 0.821 0.8287 e 1 10.06 10.26 0.396 0.4040 e 0.80 bsc 0.031 bsc e 11.56 11.96 0.455 0.4709 l 0.40 0.60 0.016 0.0236 a 0 8 0 8 issi ? notes: 1. controlling dimension: millimeters, unless otherwise specified. 2. bsc = basic lead spacing between centers. 3. dimensions d1 and e do not include mold flash protru- sions and should be measured from the bottom of the package . 4. formed leads shall be planar with respect to one another within 0.004 inches at the seating plane. d seating plane b e c 1 n/2 n/2+1 n e1 a1 a e l a

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